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In this work, we report on the anisotropic etching characteristics of β-Ga2O3 using triethylgallium (TEGa) performed in situ within an MOCVD chamber. At sufficiently high substrate temperatures, TEGa can act as a strong etchant for β-Ga2O3 utilizing the suboxide reaction between Ga and Ga2O3 [4 Ga(s) + Ga2O3 (s) → 3Ga2O (g)]. We observe that due to the monoclinic crystal structure of β-Ga2O3, TEGa etching on both (010) and (001) substrates is highly anisotropic in nature, in terms of both sidewall roughness and lateral etch rate. Smooth sidewalls are only obtained along crystal orientations that minimize sidewall surface energy. Utilizing this technique, we also demonstrate deep sub-micrometer fins with smooth sidewalls and high aspect ratios. Furthermore, we also demonstrate the damage-free nature of TEGa etching by fabricating Schottky diodes on the etched surface, which display no change in the net donor concentration. 

Abstract Optical metasurfaces, consisting of subwavelength‐scale meta‐atom arrays, hold great promise of overcoming the fundamental limitations of conventional optics. Due to their structural complexity, metasurfaces usually require high‐resolution yet slow and expensive fabrication processes. Here, using a metasurface polarimetric imaging device as an example, the photonic structures and the Nanoimprint lithography (NIL) processes are designed, creating two separate NIL molds over a patterning area of > 20 mm²with designed Moiré alignment markers by electron‐beam writing, and further subsequently integrate silicon and aluminum metasurface structures on a chip. Uniquely, the silicon and aluminum metasurfaces are fabricated by using the nanolithography and 3D pattern‐transfer capabilities of NIL, respectively, achieving nanometer‐scale linewidth uniformity, sub‐200 nm translational overlay accuracy, and <0.017 rotational alignment error while significantly reducing fabrication complexity and surface roughness. The micro‐sized multilayer metasurfaces have high circular polarization extinction ratios as large as ≈20 and ≈80 in blue and red wavelengths. Further, the metasurface chip‐integrated CMOS imager demonstrates high accuracy in broad‐band, full Stokes parameter analysis in the visible wavelength ranges and single‐shot polarimetric imaging. This novel, NIL‐based, multilayered nanomanufacturing approach is applicable to the scalable production of large‐area functional structures for ultra‐compact optic, electronic, and quantum devices.